Aeppli leads the Quantum Technologies Group spanning ETH Zurich, EPFL, and PSI. Research directions: (1) Quantum materials imaging — using SLS synchrotron X-rays (including SwissFEL ultrafast pulses) and neutrons at SINQ to image quantum phase transitions, skyrmions, and correlated phases; non-destructive imaging of device structures; (2) Rare-earth quantum magnets and qubits — LiHoF4 as a model quantum system; Er, Pr, and Nd spin qubits in crystals for quantum information and sensing; (3) Semiconductor quantum devices — silicon and germanium nanostructures probed by synchrotron nanoscale X-ray imaging; (4) Van der Waals materials and CDW memory devices. Strong interface with PSI large-scale facilities as unique quantum sensing tools for materials.
Degen leads the Spin Physics and Imaging group, one of the world's leading NV-center magnetometry labs. Research directions (as of 2025): (1) Scanning NV magnetometry of quantum materials — NV-tipped cantilevers image current flow (≲50 nm resolution) in graphene heterostructures and resolve domain walls in antiferromagnets/ferroelectrics; cryogenic scanning down to 350 mK in dilution refrigerator (published Appl. Phys. Lett. 2022). (2) Single-molecule NMR — shallow NV centers detect nuclear spins from surface-adsorbed molecules with sub-nanometer 3D resolution; 2022 Nano Lett. on amine-functionalized diamond surfaces; exploring chirality-induced spin selectivity at few-molecule level. (3) NV magnetometry protocols — reconstruction-free waveform sensing (1.1 ns time resolution, Nature 2025), gradiometric detection, spectrum demodulation for rapid scanning, multi-NV addressing. (4) Diamond nanoengineering — multicone pillar waveguides, surface engineering, scanning probe fabrication. ERC Proof-of-Concept 2025 for photonic IC single-photon NV excitation/detection for commercial quantum sensing.
Develops computational methods (DFT + many-body perturbation theory, quantum embedding) to predict properties of spin defects for quantum sensing and computing. Directions: (1) first-principles prediction of coherence properties, zero-phonon lines, and spin-photon coupling for NV, SiC divacancy, Er, and other color center platforms; (2) high-throughput screening of novel spin defect candidates in 2D materials and oxides; (3) quantum embedding methods for strongly correlated defects. Director MICCoM; NAS member; Argonne senior scientist.
Gambardella leads the Magnetism and Interface Physics group at ETH D-MATL. Research directions: (1) Scanning probe magnetometry — using NV-center cantilevers (collaboration with Degen) and magneto-optical Kerr microscopy to image spin textures (skyrmions, domain walls) in thin-film heterostructures with sub-100 nm resolution; (2) Spin-orbit torques — current-induced magnetization switching via interfacial spin-orbit coupling; spin Hall and Rashba effects for spintronic devices; (3) Single-atom magnetism — STM and X-ray absorption for element-specific orbital and spin moments of individual atoms on surfaces; (4) XMCD at synchrotron — quantitative element-specific magnetic spectroscopy. Quantum sensing angle: spin-orbit driven phenomena, high-resolution magnetic imaging.
Hamilton heads the Quantum Electronic Devices group and is Deputy Director of the ARC Centre for Future Low Energy Electronics (FLEET). The group works on hole-based quantum devices in GaAs and germanium, where strong spin-orbit coupling allows all-electrical spin control, and on topological materials and one-dimensional transport. The measurements are millikelvin transport and noise spectroscopy of very small signals in mesoscopic devices. Positioned against the established body of NV-ensemble quantum sensing work — DEER, nanoscale NMR and T1 relaxometry protocols operating at pT/sqrt(Hz) field sensitivity — the link is indirect — this is charge/spin transport rather than magnetometry — but the group's expertise in low-noise cryogenic measurement and in spin-orbit-mediated electrical spin control is directly transferable to electrically-detected spin sensing, which is the main alternative to the optical readout that limits pT/sqrt(Hz) NV ensembles. Borderline inclusion; kept under the inclusive rubric.
Explores boundary between condensed-matter physics and quantum sensing using superconductor-semiconductor circuits. Directions: (1) gate-tunable superconductor-semiconductor parametric amplifier for quantum-limited readout (PRA 2023); (2) room-temperature capacitive strong coupling to mechanical motion for electromechanical sensing (Nano Letters 2025); (3) quantum criticality in Josephson junction arrays; (4) synthetic Hamiltonians in hybrid SC-semi devices probing hidden material behavior. IST Austria → Microsoft → JILA → UChicago Nov 2023.
Hu pioneers nanofabrication of photonic and electronic devices that couple 'artificial atoms' — semiconductor quantum dots and color-center spin defects (including in silicon carbide) — to nanoscale optical cavities, enabling coherent, efficient photon-spin interfaces for quantum networking and sensing; her emphasis on nanofabrication places this as a borderline, not-preferred case relative to sensitivity-first quantum sensing.
PREFERRED. Ji is launching the Ji Quantum Lab at MIT to build next-generation scanning-probe and on-chip quantum sensors (millimeter-wave impedance microscopy, 'RFlexiScope') that map nanoscale conductivity, magnetism and collective excitations in strongly correlated and topological quantum materials down to the quantum limit. The lab is explicitly recruiting PhD students, postdocs, and UROPs as of its founding.
Studies atomically thin 2D quantum materials and their sensing applications. Directions: (1) tr-ARPES and ultrafast spectroscopy of non-equilibrium electronic dynamics in TMDs and graphene heterostructures; (2) 2D material nanophotonic devices for light sensing and emission; (3) wafer-scale CVD growth of hBN, MoS2, WSe2 for integrated quantum devices; (4) scanning probe characterization of local optical and electronic properties. Key tool: time-resolved photoemission as ultrafast electronic structure sensing.
Rahman does large-scale atomistic modelling of semiconductor quantum devices: tight-binding and DFT calculations of donor and quantum-dot wavefunctions, valley physics, spin-orbit coupling, hyperfine interactions and the response of all of these to strain and electric field, at system sizes large enough to represent a real device. The group works hand-in-glove with the Morello, Dzurak, Simmons and Rogge experiments, and increasingly uses machine learning to invert measurements into structural information. Positioned against the established body of NV-ensemble quantum sensing work — DEER, nanoscale NMR and T1 relaxometry protocols operating at pT/sqrt(Hz) field sensitivity — the same first-principles machinery is what predicts the hyperfine and spin-bath environment that determines T2 — and therefore the achievable pT/sqrt(Hz) sensitivity — of any solid-state spin sensor, including NV. Computational PI; would suit a candidate wanting a theory/experiment bridge role.