Dzurak leads the silicon CMOS quantum dot spin qubit programme at UNSW and co-founded Diraq, the company commercialising it. The group demonstrated the first silicon MOS qubit, two-qubit logic in silicon, and has pushed toward fidelities above the fault-tolerance threshold in industrially-manufactured CMOS devices, including work on gate-stack engineering for low charge noise and on single-electron-transistor charge sensing for readout. Positioned against the established body of NV-ensemble quantum sensing work — DEER, nanoscale NMR and T1 relaxometry protocols operating at pT/sqrt(Hz) field sensitivity — the relevant transferable asset is the readout: the single-electron-transistor and gate-based dispersive sensors this group builds are among the most sensitive electrometers in existence, the charge-domain analogue of pT/sqrt(Hz) magnetometry. Caveat against the stated preference: the programme is now heavily fabrication- and yield-driven and closely tied to a commercial roadmap, so a sensing-focused postdoc would be somewhat off the group's main axis.

Jamieson's group built the counted single-ion implantation capability that underpins every donor spin qubit made at UNSW and Melbourne: individual P, Sb or Bi ions are implanted into silicon through a nanoscale aperture while on-chip detector electrodes register the electron-hole pairs from each ion stop event, so the number and position of dopants is known rather than assumed. Recent directions extend this to high-atomic-number donors for nuclear-spin qudits, to colour-centre creation in diamond and silicon carbide by counted implantation, and to characterising the damage and charge environment those ions leave behind. The work is fabrication-forward but its scientific content is single-particle detection metrology. Positioned against the established body of NV-ensemble quantum sensing work — DEER, nanoscale NMR and T1 relaxometry protocols operating at pT/sqrt(Hz) field sensitivity — his contribution is upstream: the deterministic creation and validation of the very spin defects whose ensembles are later interrogated by DEER and nanoscale NMR at pT/sqrt(Hz).

Laucht works on the quantum control of spins across two platforms: donor spin qubits in silicon (with Morello and Dzurak), where he demonstrated electrically-driven single-spin control in a continuous microwave field and pioneered dressed-state protection against decoherence; and, more recently, spin defects in hexagonal boron nitride — a 2D material whose optically addressable spin defects are the most promising candidate for a van der Waals analogue of the NV centre, with the enormous advantage that the sensor can be placed a single atomic layer from the sample. Positioned against the established body of NV-ensemble quantum sensing work — DEER, nanoscale NMR and T1 relaxometry protocols operating at pT/sqrt(Hz) field sensitivity — hBN spin defects are the field's most active attempt to beat the standoff-distance limitation that caps near-surface NV ensemble sensitivity; a candidate with NV ODMR experience would be immediately productive here, running the same pulse sequences on a new defect. Strong fit.

McCallum works on the materials and detector physics of donor qubits in silicon and colour centres in diamond and silicon carbide: defect engineering by ion implantation and annealing, characterisation of the resulting spin coherence, and — most relevant to a sensing postdoc — the development of superconducting and semiconductor detectors capable of registering single implanted ions with near-unit efficiency, which is what turns implantation from a statistical process into a deterministic one. He also works on near-surface colour centres, where surface termination and Fermi-level control set the achievable coherence. Positioned against the established body of NV-ensemble quantum sensing work — DEER, nanoscale NMR and T1 relaxometry protocols operating at pT/sqrt(Hz) field sensitivity — his group supplies the near-surface, coherence-optimised spin ensembles that DEER, nanoscale NMR and T1-relaxometry protocols at pT/sqrt(Hz) sensitivity actually depend on.

Morello heads the Fundamental Quantum Technologies Laboratory and is the person who first read out the spin of a single electron, and then a single nucleus, in silicon. Current directions: high-spin donors (antimony-123, with eight nuclear levels) used as qudits and as sensors of local strain and electric field; nuclear acoustic resonance, in which a strain wave rather than a magnetic field drives the nuclear spin; engineered decoherence experiments as tests of quantum foundations; and precision tomography of multi-qubit donor registers. The group's donors are among the longest-coherence solid-state spins known (seconds for nuclei). Positioned against the established body of NV-ensemble quantum sensing work — DEER, nanoscale NMR and T1 relaxometry protocols operating at pT/sqrt(Hz) field sensitivity — a single-donor nuclear spin in silicon is functionally an NV centre with better coherence and worse readout: the same DEER, dynamical-decoupling and nuclear-register protocols apply, and the group's high-spin qudit work is aimed at exactly the multi-level sensing enhancements that the NV community is now chasing. Preferred attribute present: sensitivity and coherence, not fabrication, are the limiting variables here.

Rahman does large-scale atomistic modelling of semiconductor quantum devices: tight-binding and DFT calculations of donor and quantum-dot wavefunctions, valley physics, spin-orbit coupling, hyperfine interactions and the response of all of these to strain and electric field, at system sizes large enough to represent a real device. The group works hand-in-glove with the Morello, Dzurak, Simmons and Rogge experiments, and increasingly uses machine learning to invert measurements into structural information. Positioned against the established body of NV-ensemble quantum sensing work — DEER, nanoscale NMR and T1 relaxometry protocols operating at pT/sqrt(Hz) field sensitivity — the same first-principles machinery is what predicts the hyperfine and spin-bath environment that determines T2 — and therefore the achievable pT/sqrt(Hz) sensitivity — of any solid-state spin sensor, including NV. Computational PI; would suit a candidate wanting a theory/experiment bridge role.

Rogge (formerly Delft) works on the spectroscopy of individual dopant atoms in silicon: using transport, STM and microwave spectroscopy to read out the orbital, valley and spin structure of single donors and acceptors, including their coupling to strain, electric fields and each other. The group has mapped the wavefunctions of individual dopants and used acceptor spin-orbit coupling for electric-field-driven spin control. This is single-quantum-object measurement rather than device engineering. Positioned against the established body of NV-ensemble quantum sensing work — DEER, nanoscale NMR and T1 relaxometry protocols operating at pT/sqrt(Hz) field sensitivity — single-donor spectroscopy is the silicon analogue of single-NV work: the same questions about coherence, bath engineering and readout fidelity that fix pT/sqrt(Hz) ensemble performance appear here in a platform where the sensor can be placed with atomic precision and interrogated electrically rather than optically.

Simmons pioneered atomic-precision fabrication in silicon: hydrogen-resist STM lithography, phosphine dosing and epitaxial silicon overgrowth to place individual dopant atoms with sub-nanometre accuracy, then measure them at millikelvin. The programme has produced single-atom transistors, precision dopant arrays used as analogue quantum simulators, and the largest atom-scale device platform in the world; she also founded Silicon Quantum Computing Pty Ltd. The sensing-relevant capability is the single-electron transistor as an exquisitely sensitive electrometer, capable of resolving individual charge transitions and mapping local electrostatic potential at the atomic scale. Positioned against the established body of NV-ensemble quantum sensing work — DEER, nanoscale NMR and T1 relaxometry protocols operating at pT/sqrt(Hz) field sensitivity — her SET electrometry is the charge-domain counterpart to magnetic NV sensing at pT/sqrt(Hz): both are single-quantum-object detectors whose performance is limited by back-action and by the noise of the readout chain. Very large group, strongly fabrication-oriented and commercially entangled, which cuts against the stated preference for sensitivity-limited rather than fabrication-limited work.

Yang works on the systems-level physics of silicon spin qubits: operating qubits at elevated temperatures (above one kelvin, where cryo-CMOS control electronics can be co-integrated), valley and spin-orbit engineering, and the electrical control of spin qubits without micromagnets. The 'hot qubit' programme in particular is an engineering argument about where the classical/quantum boundary should sit in a real machine. Positioned against the established body of NV-ensemble quantum sensing work — DEER, nanoscale NMR and T1 relaxometry protocols operating at pT/sqrt(Hz) field sensitivity — raising the operating temperature of a spin sensor while preserving coherence is the same trade a pT/sqrt(Hz) NV ensemble makes implicitly by working at room temperature; Yang's work is the silicon community's attempt to buy back some of that convenience. Borderline inclusion — this is quantum computing rather than sensing — retained under the inclusive rubric.