Simmons pioneered atomic-precision fabrication in silicon: hydrogen-resist STM lithography, phosphine dosing and epitaxial silicon overgrowth to place individual dopant atoms with sub-nanometre accuracy, then measure them at millikelvin. The programme has produced single-atom transistors, precision dopant arrays used as analogue quantum simulators, and the largest atom-scale device platform in the world; she also founded Silicon Quantum Computing Pty Ltd. The sensing-relevant capability is the single-electron transistor as an exquisitely sensitive electrometer, capable of resolving individual charge transitions and mapping local electrostatic potential at the atomic scale. Positioned against the established body of NV-ensemble quantum sensing work — DEER, nanoscale NMR and T1 relaxometry protocols operating at pT/sqrt(Hz) field sensitivity — her SET electrometry is the charge-domain counterpart to magnetic NV sensing at pT/sqrt(Hz): both are single-quantum-object detectors whose performance is limited by back-action and by the noise of the readout chain. Very large group, strongly fabrication-oriented and commercially entangled, which cuts against the stated preference for sensitivity-limited rather than fabrication-limited work.