Develops colloidal semiconductor nanocrystal platforms for infrared detection and sensing. Directions: (1) HgTe and HgSe colloidal quantum dot mid-IR photodetectors operating at room temperature — record sensitivity for solution-processed IR sensors; (2) electro-optic modulation using nanocrystal films at ultrafast timescales; (3) fundamental optical and transport properties of doped nanocrystals. Primary application: low-cost infrared imaging and chemical sensing.

Studies atomically thin 2D quantum materials and their sensing applications. Directions: (1) tr-ARPES and ultrafast spectroscopy of non-equilibrium electronic dynamics in TMDs and graphene heterostructures; (2) 2D material nanophotonic devices for light sensing and emission; (3) wafer-scale CVD growth of hBN, MoS2, WSe2 for integrated quantum devices; (4) scanning probe characterization of local optical and electronic properties. Key tool: time-resolved photoemission as ultrafast electronic structure sensing.

Uses MBE thin-film growth combined with equilibrium and non-equilibrium ARPES to sense electronic structure at material interfaces. Directions: (1) non-equilibrium photoemission (tr-ARPES) to map ultrafast electron dynamics in topological and superconducting materials; (2) MBE engineering of interfacial superconductivity and topological orders at oxide and chalcogenide interfaces; (3) light-induced phase transitions probed by ultrafast ARPES as a sensing modality for correlated electron dynamics.